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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIA467EDJ-T1-GE3
SIA467EDJ-T1-GE3
MOSFETs SIA467EDJ-T1-GE3
Vishay
SIA467EDJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIA467EDJ-T1-GE3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2.05
Package Height0.75(Max)
Package Length2.05
Product CategoryPower MOSFET
Supplier PackagePowerPAK SC-70
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)45|50
Typical Rise Time (ns)10|25
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ Vgs (nC)48@8V|29@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)10|25
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)90|120
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-50
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)2520@6V
Maximum Drain Source Resistance (MOhm)13@4.5V
Maximum Gate Source Leakage Current (nA)2000
Description
Trans MOSFET P-CH 12V 31A 6-Pin PowerPAK SC-70 T/R
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