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S2N7002ET1G
S2N7002ET1G
MOSFETs S2N7002ET1G
onsemi
S2N7002ET1G
--
Diodes, Transistors and Thyristors
MOSFETs
S2N7002ET1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)3.6
Typical Rise Time (ns)1.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Typical Gate Charge @ Vgs (nC)0.81@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)1.7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)4.8
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.26
Typical Input Capacitance @ Vds (pF)26.7@25V
Maximum Drain Source Resistance (mOhm)2500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 0.26A Automotive 3-Pin SOT-23 T/R
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