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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IRFHS8242TR2PBF
IRFHS8242TR2PBF
MOSFETs IRFHS8242TR2PBF
Infineon
IRFHS8242TR2PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFHS8242TR2PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Dual Source
Package Width2
Package Height0.88
Package Length2
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Process TechnologyHEXFET
Standard Package NameQFN
Typical Fall Time (ns)5.3
Typical Rise Time (ns)19
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)10.4
Typical Gate Charge @ Vgs (nC)4.3@5V|10.4@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.5
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)5.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.9
Typical Input Capacitance @ Vds (pF)653@10V
Maximum Drain Source Resistance (mOhm)13@10V
Description
Trans MOSFET N-CH 25V 9.9A 6-Pin PQFN EP T/R
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