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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IRFH8318TR2PBF
IRFH8318TR2PBF
MOSFETs IRFH8318TR2PBF
Infineon
IRFH8318TR2PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFH8318TR2PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.75
Package Height1.03
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageQFN EP
Process TechnologyHEXFET
Standard Package NameQFN
Typical Fall Time (ns)12
Typical Rise Time (ns)33
Number of Elements per Chip1
Maximum Power Dissipation (mW)3600
Typical Gate Charge @ 10V (nC)41
Typical Gate Charge @ Vgs (nC)41@10V|19@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)18
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)27
Typical Input Capacitance @ Vds (pF)3180@10V
Maximum Drain Source Resistance (MOhm)3.1@10V
Description
Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R
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