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FDS6670AS
FDS6670AS
MOSFETs FDS6670AS
onsemi
FDS6670AS
--
Diodes, Transistors and Thyristors
MOSFETs
FDS6670AS.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)500
Process TechnologyPowerTrench
Standard Package NameSOP
Typical Fall Time (ns)18
Typical Rise Time (ns)5
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)4.2
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)27
Typical Gate Charge @ Vgs (nC)27@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)440
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.8
Typical Turn-Off Delay Time (ns)27
Maximum Diode Forward Voltage (V)0.7
Typical Diode Forward Voltage (V)0.6
Typical Gate to Drain Charge (nC)5.1
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)4.2
Typical Reverse Recovery Time (ns)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1540@15V
Typical Reverse Recovery Charge (nC)15
Maximum Drain Source Resistance (mOhm)9@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)50
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)160@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)13.5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)125
Description
Trans MOSFET N-CH 30V 13.5A 8-Pin SOIC T/R
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