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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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FDP023N08B-F102
FDP023N08B-F102
MOSFETs FDP023N08B-F102
onsemi
FDP023N08B-F102
--
Diodes, Transistors and Thyristors
MOSFETs
FDP023N08B-F102.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.1(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameTO-220
Typical Fall Time (ns)56
Typical Rise Time (ns)71
Number of Elements per Chip1
Maximum Power Dissipation (mW)245000
Typical Gate Charge @ 10V (nC)150
Typical Gate Charge @ Vgs (nC)150@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)41
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)111
Maximum Gate Threshold Voltage (V)3.8
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)242
Typical Input Capacitance @ Vds (pF)10350@37.5V
Maximum Drain Source Resistance (MOhm)2.35@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 75V 242A 3-Pin(3+Tab) TO-220 Tube
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