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FDBL0065N40
FDBL0065N40
MOSFETs FDBL0065N40
onsemi
FDBL0065N40
--
Diodes, Transistors and Thyristors
MOSFETs
FDBL0065N40.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Package Width10.48(Max)
Package Height2.4(Max)
Package Length10(Max)
Product CategoryPower MOSFET
Supplier PackageHPSOF EP
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)52
Typical Rise Time (ns)82
Number of Elements per Chip1
Maximum Power Dissipation (mW)429000
Typical Gate Charge @ 10V (nC)220
Typical Gate Charge @ Vgs (nC)220@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)54
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)106
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)300
Typical Input Capacitance @ Vds (pF)15900@25V
Maximum Drain Source Resistance (mOhm)0.65@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 40V 300A 9-Pin(8+Tab) HPSOF EP T/R
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