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ECH8659-TL-HX
ECH8659-TL-HX
MOSFETs ECH8659-TL-HX
onsemi
ECH8659-TL-HX
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Product CategoryPower MOSFET
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)25
Typical Rise Time (ns)25
Number of Elements per Chip2
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ 10V (nC)11.8
Typical Gate Charge @ Vgs (nC)11.8@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)43
Maximum Gate Threshold Voltage (V)2.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)710@10V
Maximum Drain Source Resistance (mOhm)24@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH Si 30V 7A T/R
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