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IGBT Modules A2C50S65M2-F
STMicroelectronics
A2C50S65M2-F
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Diodes, Transistors and Thyristors
IGBT Modules
A2C50S65M2-F.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTray
Pin Count35
AutomotiveNo
PCB changed35
Part StatusActive
Channel TypeN
ConfigurationHex
Package Width56.7
Package Height12
Package Length62.8
Supplier PackageACEPACK-2
Maximum Power Dissipation (mW)208000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)650
Maximum Continuous Collector Current (A)50
Maximum Gate Emitter Leakage Current (uA)0.5
Typical Collector Emitter Saturation Voltage (V)1.95
Description
Trans IGBT Module N-CH 650V 50A 208000mW 35-Pin ACEPACK-2 Tray
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