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GP BJT JANTXV2N6250
Microchip Technology
JANTXV2N6250
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 2 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 26.42 |
| Package Height | 7.92 |
| Package Length | 39.29 |
| Product Category | Bipolar Power |
| Supplier Package | TO-3 |
| Standard Package Name | TO-204-AA |
| Minimum DC Current Gain | 8@10A@3V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 6000 |
| Maximum DC Collector Current (A) | 10 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 375 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 275 |
| Maximum Base Emitter Saturation Voltage (V) | 2.25@1.25A@10A |
| Maximum Collector-Emitter Saturation Voltage (V) | 1.5@1.25A@10A |
| Description |
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