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GP BJT JANTXV2N5660U3
Microchip Technology
JANTXV2N5660U3
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 10.16 |
| Package Length | 7.52 |
| Product Category | Bipolar Power |
| Supplier Package | SMD-0.5 |
| Standard Package Name | SMD |
| Minimum DC Current Gain | 40@50mA@2V|40@0.5A@5V|15@1A@5V|5@2A@5V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 2 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 250 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 200 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@0.1A@1A|1.5@0.4A@2A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@0.1A@1A|0.8@0.4A@2A |
| Description |
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