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GP BJT JAN2N2432
Microchip Technology
JAN2N2432
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Diameter | 5.84(Max) |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Bag |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Height | 5.33(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TO-18 |
| Standard Package Name | TO-206-AA |
| Minimum DC Current Gain | 30@10uA@5V|80@1mA@5V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 300 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.15@0.5mA@10mA |
| Description |
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