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GP BJT 6385-MBT2907A
onsemi
6385-MBT2907A
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| Type | PNP |
| EU RoHS | Compliant |
| Packaging | Tape and Reel |
| Automotive | Unknown |
| Part Status | Obsolete |
| Configuration | Single |
| Product Category | Bipolar Small Signal |
| Minimum DC Current Gain | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 350 |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 1.3@15mA@150mA|2.6@50mA@500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@15mA@150mA|1.6@50mA@500mA |
| Description |
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