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S29AS008J70BFI040
S29AS008J70BFI040
Flash S29AS008J70BFI040
Cypress
S29AS008J70BFI040
--
Memory
Flash
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
Cell TypeNOR
ECCN (US)EAR99
PackagingTray
Pin Count48
AutomotiveNo
Boot BlockYes
Lead ShapeBall
ECC SupportNo
PCB changed48
Part StatusObsolete
Sector Size8Kbyte x 8|64Kbyte x 15
Timing TypeAsynchronous
ArchitectureSectored
Package Width6.15
Interface TypeParallel
Package Height0.76(Max)
Package Length8.15
Number of Words1M/512K
ProgrammabilityYes
Supplier PackageBGA
Block OrganizationAsymmetrical
Chip Density (bit)8M
Command CompatibleYes
Process TechnologyCMOS
OE Access Time (ns)25
Program Current (mA)30
Support of Page ModeNo
Max. Access Time (ns)70
Standard Package NameBGA
Location of Boot BlockBottom|Top
Maximum Erase Time (s)10/Sector
Operating Current (mA)12
Address Bus Width (bit)20/19
Programming Voltage (V)1.65 to 1.95
Number of Bits/Word (bit)8/16
Supplier Temperature GradeIndustrial
Maximum Programming Time (ms)160000/Chip
Maximum Operating Temperature (°C)85
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)1.95
Minimum Operating Supply Voltage (V)1.65
Typical Operating Supply Voltage (V)1.8
Description
NOR Flash Parallel 1.8V 8M-bit 1M x 8/512K x 16 70ns 48-Pin BGA Tray
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