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Flash NAND128W3A0AN6T
Micron Technology
NAND128W3A0AN6T
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Memory
Flash
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Not Compliant |
| Cell Type | SLC NAND |
| ECCN (US) | 3A991.b.1.a |
| Packaging | Tape and Reel |
| Page Size | 256Words/512byte |
| Automotive | No |
| Boot Block | No |
| ECC Support | Yes |
| Part Status | Unconfirmed |
| Sector Size | 16Kbyte x 1024 |
| Timing Type | Asynchronous |
| Architecture | Sectored |
| Interface Type | Parallel |
| Number of Words | 16M |
| Programmability | Yes |
| Block Organization | Symmetrical |
| Chip Density (bit) | 128M |
| Command Compatible | No |
| Program Current (mA) | 20 |
| Support of Page Mode | Yes |
| Max. Access Time (ns) | 12000 |
| Maximum Erase Time (S) | 0.003/Block |
| Operating Current (mA) | 20 |
| Address Bus Width (bit) | 24 |
| Number of Bits/Word (bit) | 8 |
| Minimum Endurance (Cycles) | 100000 |
| Supplier Temperature Grade | Industrial |
| Maximum Page Access Time (ns) | 50(Min) |
| Maximum Programming Time (ms) | 0.5/Page |
| Maximum Operating Temperature (°C) | 85 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Minimum Operating Supply Voltage (V) | 2.7 |
| Typical Operating Supply Voltage (V) | 3|3.3 |
| Description |
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