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Discrete Semiconductor Products UPA2816T1S-E2-AT
Renesas Electronics
UPA2816T1S-E2-AT
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Discrete Semiconductor Products
Specification
| Product Attribute | Attribute Value |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 17A, 10V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Supplier Device Package | 8-HWSON (3.3x3.3) |
| Gate Charge (Qg) (Max) @ Vgs | 33.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Description |
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